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| SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 JANUARY 1996 COMPLEMENTARY TYPE PARTMARKING DETAIL 7 SXTA42 S2D SXTA92 C E B SOT89 SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg TYP. MAX. VALUE -300 -300 -6 -500 1 -65 to +150 UNIT V V V -0.25 -0.1 -0.5 -0.9 25 40 25 50 6 MHz pF A A C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) hFE MIN. -300 -300 -5 UNIT V V V mA W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). CONDITIONS. IC=-100A, IE=0 IC=-1mA, IB=0* IE=-100A, IC=0 VCB=-200V, IE=0 VEB=-3V, IC=0 IC=-20mA, IB=-2mA* IC=-20mA, IB=-2mA* IC=-1mA, VCE=-10V* IC=-10mA, VCE=-10V* IC=-30mA, VCE=-10V* IC=-10mA, VCE=-20V f=20MHz VCB=-20V, f=1MHz V V fT Cobo *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical characteristics graphs see FMMTA92 datasheet. 3 - 307 |
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